Samsung Electronics begins shipment of 12-layer HBM4E samples with higher bandwidth, improved energy efficiency and expanded memory capacity for AI computing platforms.

These new high-bandwidth memory and low-power DRAM solutions target scalable AI infrastructures, edge computing, and data centers.

Samsung Foundry and Synopsys collaborate to develop integrated design flows enabling multi-die semiconductor architectures for AI, HPC, and advanced computing applications.

Samsung Electronics begins industry-first commercial shipments of sixth-generation high-bandwidth memory for AI and HPC workloads.

Automotive E/E architectures are shifting to centralized designs for better performance, cost-efficiency, and safety—driving demand for high-speed, reliable LPDDR5X automotive-grade memory.

Samsung's wireless charger uses electromagnetic induction for cable-free charging, supporting Qi standards, high power (up to 50W), efficiency, compatibility, and advanced in-band communication technology.

The exhibition will focus on Samsung’s advanced technologies, highlighting how they are driving new possibilities in diverse applications including HPC, server, data center, automotive and consumer electronics.

New GDDR7 offers industry-leading capacity and speed of over 40Gbps, significantly raising the bar for graphics DRAM powering future applications.

Integrating Samsung’s 5nm controller and eighth-generation V-NAND, PM9E1 provides unmatched performance and power efficiency suitable for AI PCs.

With capacities of up to 4TB, 73% better power efficiency and random read and write speeds of 1,050K IOPS and 1,400K IOPS respectively, the 990 EVO Plus offers the best-in-class SSD experience to consumers, workers and gamers alike.