Nexperia’s new flip-chip ESD protection diodes offer ultra-low capacitance, high signal integrity, and space-saving design for automotive data links.

This release addresses the market demand from automotive manufacturers for ICs that can help systems achieve ASIL-B compliance much earlier in the design cycle.

Nexperia's 1200 V SiC MOSFETs in X.PAK packaging offers superior thermal performance, top-side cooling, and efficiency for industrial and EV charging applications.

Nexperia adds 12 new e-mode GaN FETs, enhancing efficiency and compactness for consumer, industrial, server, and telecom applications across voltage ranges.

Nexperia has introduced a new series of high-performance gate driver ICs, designed to drive N-channel MOSFETs in synchronous buck or half-bridge configurations, enhancing efficiency and robustness in applications.

Nexperia and KOSTAL are partnering to develop silicon carbide MOSFETs for electric vehicle onboard chargers, leveraging Nexperia's wide bandgap semiconductor expertise and KOSTAL's industry insights.

Nexperia introduces new AC/DC flyback controllers for GaN-based converters, enhancing power efficiency and reducing standby consumption, making them ideal for high-density power applications.

50 μA and general-purpose devices offer package flexibility for automotive and non-automotive applications.

Optimized for low RDSon, low spiking and high efficiency in switching applications.

Nexperia announced that it is now offering its industry leading 1200 V silicon carbide (SiC) MOSFETs in D2PAK-7 surface mount device (SMD) packaging, with a choice of 30, 40, 60, and 80 mΩ RDSon values.