Explore the latest GaN and SiC technologies to ‘Electrify Our World’, & deliver the most efficient and reliable power solutions for AI data centers, EVs, and consumer markets, from 20 W to 20 MW.

Next-gen silicon carbide (SiC) power semis drive innovation in 400 and 800 V EV architectures.

3rd gen 650 V ‘fast’ silicon carbide (SiC) MOSFETs deliver highest power density in robust, thermally enhanced packaging for critical, high-reliability, high-efficiency applications.

Leading international exhibition highlights the latest gallium nitride (GaN) and silicon carbide (SiC) technologies for the safest, most efficient, most reliable power for fast charging, power conversion and storage, motor drive, and more.

Navitas to showcase the path to a fully-electrified planet and how next-gen GaN and SiC power semis address a diverse $22B/yr market, with an exciting, informative, in-person experience.