SAMSUNG DEVELOPS INDUSTRY-FIRST 36GB HBM3E 12H DRAM

Samsung Electronics announced that it has developed HBM3E 12H, the industry’s first 12-stack HBM3E DRAM and the highest-capacity HBM product to date.

Samsung’s HBM3E 12H provides an all-time high bandwidth of up to 1,280 gigabytes per second (GB/s) and an industry-leading capacity of 36 gigabytes (GB). In comparison to the 8-stack HBM3 8H, both aspects have improved by more than 50%.

The HBM3E 12H applies advanced thermal compression non-conductive film (TC NCF), allowing the 12-layer products to have the same height specification as 8-layer ones to meet current HBM package requirements. The technology is anticipated to have added benefits, especially with higher stacks as the industry seeks to mitigate chip die warping that comes with thinner die. Samsung has continued to lower the thickness of its NCF material and achieved the industry’s smallest gap between chips at seven micrometres (µm), while also eliminating voids between layers. These efforts result in enhanced vertical density by over 20% compared to its HBM3 8H product.

Samsung’s advanced TC NCF also improves the thermal properties of the HBM by enabling the use of bumps in various sizes between the chips. During the chip bonding process, smaller bumps are used in areas for signalling and larger ones are placed in spots that require heat dissipation. This method also helps with higher product yield.

As AI applications grow exponentially, the HBM3E 12H is expected to be an optimal solution for future systems that require more memory. Its higher performance and capacity will especially allow customers to manage their resources more flexibly and reduce the total cost of ownership (TCO) for data centres. When used in AI applications, it is estimated that, in comparison to adopting HBM3 8H, the average speed for AI training can be increased by 34% while the number of simultaneous users of inference services can be expanded more than 11.5 times.