TDK Corporation presents a new series of EPCOS power capacitors for DC link applications. The new capacitors are available for rated voltages of 700 V DC to 2000 V DC and cover a capacitance range of 20 µF to 270 µF.
STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, has announced a new family of ST Intelligent and Integrated Gallium Nitride (GaN) solutions, STi2GaN.
Power switches based on the wide bandgap (WBG) material gallium nitride (GaN) enable excellent efficiency and high switching frequency, starting a new era in power electronics.
Panasonic’s innovative optical sensor accurately detects particles as small as 0.3µm, improving surrounding air quality by the smart activation of air purification equipment.
Intel today launched its newest 3rd Gen Intel® Xeon® Scalable processor (code-named “Ice Lake”), including new network-optimized “N-SKUs” along with verified solution blueprints that accelerate time to market.
Applied Materials, Inc. today announced materials engineering solutions that give its memory customers three new ways to further scale DRAM and accelerate improvements in chip performance, power, area, cost and time to market (PPACt).
Home to one of the nation’s first cross-industry 5G testbeds on it research campus in Upstate New York, GE Research, the technology development arm of the General Electric Company (GE), officially launched two projects as part of the U.S. Department of Defense’s (DOD) recently announced $600 million 5G initiative.
FN980 is ideal for bandwidth-intensive enterprise applications and enables original equipment manufacturers (OEMs) to quickly leverage AT&T’s 5G nationwide network.
After a successful integration of DECTRIS ELA® detector into Gatan’s DigitalMicrograph® software and introduction of the Stela camera to their portfolio, the EM manufacture from California is now announcing the DECTRIS-powered hybrid-pixel camera as a low-voltage partner to the Gatan’s GIF Continuum® K3® product line to enable advanced EELS and 4D STEM over the full energy range of today's S/TEM.