Vishay Intertechnology introduced a new 80 V symmetric dual n-channel power MOSFET that combines high and low side TrenchFET® Gen IV MOSFETs in a single 3.3 mm by 3.3 mm PowerPAIR® 3x3FS package.
Infineon Technologies AG introduces the 750V G1 discrete CoolSiC™ MOSFET to meet the increasing demand for higher efficiency and power density in industrial and automotive power applications.
Rohde & Schwarz and Samsung have collaborated to verify secure ranging test cases for the ultra-wideband (UWB) PHY layer and assess the secure receiver characteristics of devices based on FiRa specifications.
Rohde & Schwarz received the Innovative Breakthrough in Mobile Technology Award at GTI Awards 2024 for its R&S CMX500 radio communication tester’s support of RedCap testing from early R&D to certification and conformance.